High-frequency circuit module

ABSTRACT

Provided is a high-frequency module that can prevent a transmission signal from reaching a reception circuit and that can achieve high mounting density. A first duplexer for a first frequency band is mounted on a circuit substrate, and a second transmission filter and a second reception filter that constitute a second duplexer for a second frequency band are embedded in the circuit substrate. The second transmission filter and the second reception filter are embedded in the circuit substrate in locations that overlap at least a part of a projection region that is formed by projecting the first duplexer in a thickness direction of the circuit substrate. The first frequency band and the second frequency band are separated from each other by at least a prescribed frequency range.

This application is a Divisional Application of a pending application,U.S. application Ser. No. 13/966,517 filed on Aug. 14, 2013 and claimsthe benefit of Japanese Application No. 2012-180527, filed in Japan onAug. 16, 2012, both of which are hereby incorporated by reference intheir entireties.

TECHNICAL FIELD

The present invention relates to a high-frequency circuit module havinga high-frequency circuit mounted on a circuit substrate thereof, andmore particularly, to a mounting structure of a transmission filter thatfilters a high-frequency signal outputted from a transmission circuitand a reception filter that filters a high-frequency signal inputtedinto a reception circuit.

BACKGROUND ART

In recent years, mobile phones are becoming more sophisticated andsmaller as represented by multi-function mobile phones, i.e., smartphones. In such mobile phones, a high-frequency circuit module, in whichvarious components that are necessary for transmitting and receivinghigh-frequency signals are mounted on a circuit substrate thereof, isprovided on a mother board (see Patent Document 1, for example). In thehigh-frequency circuit module described in Patent Document 1, a poweramplifier IC, a transmission filter, a reception filter, and the likeare provided on the circuit substrate. Inside the circuit substrate,passive components such as capacitors that constitute a matching circuitand the like are embedded. The high-frequency circuit module describedin Patent Document 1 is provided with two transmission/reception systemsrespectively for the cellular system 800 MHz band and for the PCS(Personal Communication Services) system 1.9 GHz band, and one receptionsystem for the 1.5 GHz band that is the reception band of GPS (GlobalPositioning System) so as to enable the positioning function thatutilizes GPS.

RELATED ART DOCUMENTS Patent Documents

-   Patent Document 1: Japanese Patent Application Laid-Open Publication    No. 2005-277939

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

The high-frequency circuit module described in Patent Document 1 isequipped with the transmission/reception systems for the two frequencybands as described above, but in recent years, there have been demandsfor a capability of handling a greater number of frequency bands andfurther size reduction. However, the configuration described in PatentDocument 1 did not allow a plurality of transmission/reception systemsfor various frequency bands to be mounted in high density. Thetransmission filter and the reception filter, in particular, cause aproblem because they require relatively large mounting areas, and theyare likely to cause a transmission signal to interfere with thereception circuit. The latter is a phenomenon that occurs when ahigh-frequency signal that has been transmitted through the firsttransmission/reception system enters the reception circuit through thesecond transmission/reception system. This phenomenon is caused as aresult of the frequency bands of a plurality of transmission/receptionsystems partially overlapping or being close to each other. Thefollowing case can be given as a specific example: let's assume that thetransmission band in the frequency range of the firsttransmission/reception system overlaps the reception band in thefrequency range of the second transmission/reception system, and aduplexer of the first transmission/reception system and a duplexer ofthe second transmission/reception system are mounted on a circuitsubstrate adjacently to each other. In this case, when the communicationis performed using the first transmission/reception system, thetransmission signal is directly coupled with the reception filter of theduplexer of the second transmission/reception system through theelectromagnetic coupling, or is electromagnetically coupled with antennawiring. This causes the transmission signal to flow into the receptionfilter of the duplexer of the second transmission/reception system, andsubsequently flow into the reception circuit through the receptionfilter. In recent mounting techniques, the reception circuits of thefirst transmission/reception system and the secondtransmission/reception system are often included in a common integratedcircuit. Therefore, in a vicinity of the integrated circuit, thetransmission signal that has passed through the reception filter of theduplexer and that flows through the reception wiring of the secondtransmission/reception system may be electromagnetically coupled withwiring of the first transmission/reception system, and may flow into thereception circuit of the first transmission/reception system of theintegrated circuit.

The present invention was made in view of the above-mentioned problems,and aims at providing a high-frequency circuit module that can preventthe loop interference of the transmission signal with the receptioncircuit and that can achieve high mounting density.

Means for Solving the Problems

In order to achieve the above object, a high-frequency circuit moduleaccording to the present invention includes: a circuit substrateprovided with a transmission circuit and a reception circuit for ahigh-frequency signal; a first transmission filter that performsfiltering in a first frequency band on a signal outputted from thetransmission circuit and a first reception filter that performsfiltering in the first frequency band on a signal inputted into thereception circuit; and a second transmission filter that performsfiltering in a second frequency band on a signal outputted from thetransmission circuit and a second reception filter that performsfiltering in the second frequency band on a signal inputted into thereception circuit, wherein the first frequency band and the secondfrequency band are separated from each other by at least a prescribedfrequency range therebetween, wherein the first transmission filter andthe first reception filter are mounted on the circuit substrate, andwherein the second transmission filter and the second reception filterare embedded in the circuit substrate so as to overlap at least a partof the first transmission filter and the first reception filter whenviewed in a plan view.

In the present invention, the first transmission filter and the firstreception filter are mounted on the circuit substrate. On the otherhand, the second transmission filter and the second reception filter areembedded in the circuit substrate. The second transmission filter andthe second reception filter are embedded so as to overlap at least apart of the projection region that is formed by projecting the firsttransmission filter and the first reception filter in the thicknessdirection of the circuit substrate. That is, the first transmissionfilter and the first reception filter are in a relatively close vicinityof the second transmission filter and the second reception filter. Inthe present invention, because the first frequency band and the secondfrequency band are separated from each other by at least a prescribedfrequency range therebetween, the transmission signal passing throughthe first transmission filter can be prevented from beingelectromagnetically coupled with the second reception filter. Similarly,the transmission signal passing through the second transmission filtercan be prevented from being electromagnetically coupled with the firstreception filter. This makes it possible to achieve both the improvementin mounting density and the prevention of the loop interference of thetransmission signal with the reception circuit.

In one preferred exemplary configuration of the present invention, thecircuit substrate may include a ground conductive layer formed betweenthe first transmission filter and the first reception filter and betweenthe second transmission filter and the first reception filter. With thisground conductive layer, the loop interference of the transmissionsignal can be prevented more effectively.

In an exemplary configuration of the present invention, the firsttransmission filter and the first reception filter constitute a firstduplexer circuit, and the second transmission filter and the secondreception filter constitute a second duplexer circuit. In this case, inorder to ensure the isolation of the transmitter from the receiver andto improve the mounting density, it is preferable that the firstduplexer circuit be enclosed in a package, that the package be mountedon the circuit substrate, and that the second transmission filter andthe second reception filter be embedded in the circuit substrate asseparate components. The term “duplexer circuit” used here refers to acircuit that electrically isolates a transmission signal from areception signal to allow a common antenna to be used for both thetransmission and reception in the wireless communication technology ofthe FDD (Frequency Division Duplex) scheme. This circuit is alsoreferred to as an “antenna sharing circuit.” A device that electricallyisolates two frequency bands from each other is generally called aduplexer.

In another preferred exemplary configuration of the present invention,the high-frequency circuit module may additionally include a thirdtransmission filter that performs filtering in a third frequency band ona signal outputted from the transmission circuit and a third receptionfilter that performs filtering in the third frequency band on a signalinputted into the reception circuit, wherein the first frequency bandand the third frequency band partially overlap, or are close to eachother, and wherein the third transmission filter and the third receptionfilter are mounted on the circuit substrate so as to be at least aprescribed distance away from the first transmission filter and thefirst reception filter.

In another preferred exemplary configuration of the present invention,the high-frequency circuit module may additionally include a fourthtransmission filter that performs filtering in a fourth frequency bandon a signal outputted from the transmission circuit and a fourthreception filter that performs filtering in the fourth frequency band ona signal inputted into the reception circuit, wherein the secondfrequency band and the fourth frequency band partially overlap, or areclose to each other, and wherein the fourth transmission filter and thefourth reception filter are embedded in the circuit substrate so as tobe at least a prescribed distance away from the second transmissionfilter and the second reception filter.

Also, a high-frequency circuit module of the present invention includes:a circuit substrate having mounted thereon a transmission circuit and areception circuit for a high-frequency signal; a first high-frequencyamplifier that amplifies a signal in a first frequency band outputtedfrom a transmission circuit; a second high-frequency amplifier thatamplifies a signal in a second frequency band outputted from atransmission circuit; a first transmission filter that filters a signaloutputted from the first high-frequency amplifier; and a secondtransmission filter that filters a signal outputted from the secondhigh-frequency amplifier, wherein the first frequency band and thesecond frequency band are separated from each other by at least aprescribed frequency range therebetween, wherein the firsthigh-frequency amplifier and the second high-frequency amplifier aremounted on the circuit substrate as one package, wherein the firsttransmission filter is mounted on the circuit substrate, wherein thesecond transmission filter is embedded in the circuit substrate, andwherein the first transmission filter and the second transmission filterare respectively made of acoustic wave filters.

Effects of the Invention

As described above, according to the present invention, the firsttransmission filter and the first reception filter for the firstfrequency band are mounted on the circuit substrate, and the secondtransmission filter and the second reception filter for the secondfrequency band are embedded in the circuit substrate, and therefore, itis possible to improve the mounting efficiency. Further, because thefirst frequency band and the second frequency band are separated fromeach other by at least a prescribed frequency range therebetween, theloop interference of the transmission signal with the reception circuitcan be prevented.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic circuit diagram of a high-frequency circuitmodule.

FIG. 2 is a top view of the high-frequency circuit module.

FIG. 3 is a cross-sectional view of the high-frequency circuit module.

DETAILED DESCRIPTION OF EMBODIMENTS

A high-frequency circuit module according to Embodiment 1 of the presentinvention will be explained with reference to figures. FIG. 1 is aschematic circuit diagram of the high-frequency circuit module. In thepresent embodiment, for ease of explanation, configurations concerningthe gist of the present invention will be mainly explained.

A high-frequency circuit module 100 according to the present embodimentis used for a mobile phone that is capable of handling four frequencybands. As shown in FIG. 1, the high-frequency circuit module 100includes a high-frequency switch 101, first to fourth duplexers 110,120, 130, and 140, high-frequency power amplifiers 151 to 154 fortransmission, and an RFIC (Radio Frequency Integrated Circuit) 160. Inthe actual circuit configuration, a matching circuit, a bandpass filterfor transmission signals, and the like are provided for each frequencyband, but they are omitted in the present embodiment for ease ofexplanation.

The high-frequency switch 101 switches connections from the respectivefirst to fourth duplexers 110 to 140 to an external antenna 10.

The respective duplexers 110 to 140 include transmission filters 112,122, 132, and 142 and reception filters 114, 124, 134, and 144,respectively. As the transmission filters 112, 122, 132, and 142 and thereception filters 114, 124, 134, and 144, various filters such assurface acoustic wave (SAW) filters and bulk acoustic wave (BAW) filterscan be used. In the present embodiment, the SAW filters are used. Thetransmission filters 112, 122, 132, and 142 are connected totransmission ports of the RFIC 160 through the high-frequency poweramplifiers 151 to 154, respectively. The reception filters 114, 124,134, and 144 are connected to reception ports of the RFIC 160.

The RFIC 160 performs a modulation/demodulation process, a multiplexingprocess, and the like to high-frequency signals. The reception ports ofthe RFIC 160 that are respectively connected to the first and thirdduplexers 110 and 130 are adjacent to each other. The reception ports ofthe RFIC 160 that are respectively connected to the second and fourthduplexers 120 and 140 are adjacent to each other.

As described above, the high-frequency circuit module 100 of the presentembodiment is capable of handling four frequency bands, and theduplexers 110 to 140 respectively filter high-frequency signals suchthat only the signals of the corresponding frequency bands can passthrough.

Specifically, the first duplexer 110 is provided for W-CDMA (WidebandCode Division Multiple Access) or LTE (Long Term Evolution) on the 2100MHz band. The first transmission filter 112 is a 1920 to 1980 MHzbandpass filter, and the first reception filter 114 is a 2110 to 2170MHz bandpass filter.

The second duplexer 120 is provided for W-CDMA or LTE on the 900 MHzband. The second transmission filter 122 is an 880 to 915 MHz bandpassfilter, and the second reception filter 124 is a 925 to 960 MHz bandpassfilter.

The third duplexer 130 is provided for W-CDMA or LTE on the 1900 MHzband. The third transmission filter 132 is a 1850 to 1910 MHz bandpassfilter, and the third reception filter 134 is a 1930 to 1990 MHzbandpass filter. The transmission frequency range of the first duplexer110 and the reception frequency range of the third duplexer 130partially overlap.

The fourth duplexer 140 is provided for W-CDMA or LTE on the 850 MHzband. The fourth transmission filter 142 is an 824 to 849 MHz bandpassfilter, and the fourth reception filter 144 is an 869 to 894 MHzbandpass filter. The reception frequency range of the fourth duplexer140 and the transmission frequency range of the second duplexer 120partially overlap.

Next, with reference to FIGS. 2 and 3, a structure of the high-frequencycircuit module 100 will be explained. FIG. 2 is a top view of thehigh-frequency circuit module, and FIG. 3 is a cross-sectional viewalong the line indicated by the arrows A in FIG. 2.

As shown in FIGS. 2 and 3, in the high-frequency circuit module 100, theRFIC 160, the first duplexer 110, and the third duplexer 130 aresurface-mounted on the top surface of the circuit substrate 200. Thefirst duplexer 110 is configured such that the first transmission filter112 and the first reception filter 114 are enclosed in a package forsurface mounting. The third duplexer 130 is configured in the samemanner. On the other hand, the second duplexer 120 and the fourthduplexer 140 are embedded in the circuit substrate 200. The secondduplexer 120 and the fourth duplexer 140 are configured such that someof the constituting elements thereof (such as transmission filters andreception filters) are embedded in the circuit substrate 200 as separatecomponents, respectively. That is, it should be noted that the secondduplexer 120 or the fourth duplexer 140 is not enclosed in a package,unlike the first duplexer 110 and the third duplexer 130.

The circuit substrate 200 is a multi-layer substrate formed byalternately laminating insulating layers and conductive layers. As shownin FIG. 3, the circuit substrate 200 includes a metal conductive layeras a core layer 210 that has excellent conductivity and that isrelatively thick, a plurality of insulating layers 221 and conductivelayers 222 that are formed on one of the main surfaces (top surface) ofthe core layer 210, and a plurality of insulating layers 231 andconductive layers 232 that are formed on the other main surface (bottomsurface) of the core layer 210. The insulating layers 221 and 231 andthe conductive layers 222 and 232 are formed on the respective mainsurfaces of the core layer 210 by the build-up method. Two of theconductive layers 222 that are interposed between the core layer 210 andone of the main surfaces (top surface) of the circuit substrate 200, andone of the conductive layers 232 that are interposed between the corelayer 210 and the other main surface (bottom surface) of the circuitsubstrate 200 are respectively used as ground conductive layers 225,226, and 235 that are provided with a reference potential (ground). Theground conductive layers 225 and 235 are the conductive layers 222 and232 respectively closest to the core layer 210, and are connected to thecore layer 210 through via conductors 241, respectively. With thisconfiguration, the core layer 210 also serves as a ground conductor.Also, between the two ground conductive layers 225 and 226, theconductive layer 222 is interposed, and wiring formed on the conductivelayer 222 serves as a stripline. On one of the main surfaces (topsurface) of the circuit substrate 200, wiring 202 and conductive lands201 for part mounting are formed. On the other main surface (bottomsurface) of the circuit substrate 200, terminal electrodes 205 forconnecting the circuit substrate 200 to a main substrate are formed. Thelands 201 have the RFIC 160, the high-frequency power amplifiers 151 to154, the first duplexer 110, and the third duplexer 130 solderedthereto.

In the core layer 210, penetrating holes 211 are formed to placecomponents therein. In the penetrating holes 211, the secondtransmission filter 122 and the second reception filter 124 thatconstitute the second duplexer 120 are placed, respectively. Therefore,it is preferable that the thickness of the core layer 210 be larger thanthe height of the components that are placed therein. In the presentembodiment, the core layer 210 is made of a metal plate, and morespecifically, is made of a copper or copper alloy metal plate. In thepenetrating holes 211, a gap around the component placed therein isfilled with an insulator such as a resin, which is formed integrallywith the insulating layers 221 and 231. On the top surfaces of thesecond transmission filter 122 and the second reception filter 124,terminal electrodes 122 a and 124 a are formed. The terminal electrodes122 a and 124 a are respectively connected to the wiring conductivelayer 222 and the ground conductive layer 225 through via conductors242. The fourth duplexer 140 is embedded in the circuit substrate 200 inthe same manner as the second duplexer 120.

The features of the present invention include the following: (a) some ofthe duplexers are embedded in the circuit substrate 200; (b) theembedded duplexer is located so as to overlap a part of the projectionregion of the duplexer mounted on one of the main surfaces (top surface)of the circuit substrate 200; and (c) the frequency band of the embeddedduplexer and the frequency band of the duplexer mounted on one of themain surfaces (top surface) of the circuit substrate 200 are separatedfrom each other by at least a prescribed frequency range therebetween.Specifically, (c) means that (c1) the frequency band of the transmissionfilter of the duplexer on the circuit substrate and the frequency bandof the reception filter of the duplexer embedded in the circuitsubstrate are separated from each other by at least a prescribedfrequency range therebetween, and (c2) the frequency band of thereception filter of the duplexer on the circuit substrate and thefrequency band of the transmission filter of the duplexer embedded inthe circuit substrate are separated from each other by at least aprescribed frequency range therebetween. Here, “separated from eachother by at least a prescribed frequency range therebetween” means thatthe two frequency bands have a frequency range therebetween that islarge enough to prevent a transmission signal passing through atransmission filter of one duplexer from being electromagneticallycoupled with a reception filter of the other duplexer and flowing intothe RFIC 160, in other words, large enough to ensure the electricalisolation. This configuration can be achieved by dividing the frequencybands that are handled by the high-frequency circuit module 100 into twogroups depending on the frequency level, and using the embedded duplexerto handle the frequency band that belongs to a group different from thatof the frequency band of the duplexer mounted on one of the mainsurfaces (top surface) of the circuit substrate 200, for example. As amethod of dividing the frequency bands into groups, frequency bandshigher than a certain frequency (1 GHz, for example) can be grouped intoa higher range group, and frequency bands lower than the certainfrequency can be grouped into a lower range group. This way, theabove-mentioned two frequency bands can be separated from each otherover a frequency range that is at least equal to the frequency rangebetween the two groups.

One of the features of the present invention is that (d) a groundconductive layer is formed between the duplexer mounted on the circuitsubstrate 200 and the duplexer embedded in the circuit substrate 200.

One of the features of the present invention is that (e) a plurality ofduplexers mounted on the circuit substrate 200 and a plurality ofduplexers embedded in the circuit substrate are respectively placed soas to have a prescribed distance from each other. Here, “have aprescribed distance from each other” means that the respective duplexersare positioned so as to have spacing therebetween that is large enoughto ensure the desired reception performance of the RFIC 160 even if atransmission signal passing through the transmission filter of oneduplexer is electromagnetically coupled with the reception filter of theother duplexer, in other words, large enough to ensure the electricalisolation.

One of the features of the present invention is that (f) a plurality ofduplexers that may be used at the same time are separately disposed; oneis mounted on one of the main surfaces (top surface) of the circuitsubstrate 200; and the other is embedded in the circuit substrate 200.From the perspective of electrical isolation and heat dissipation, it ismore preferable to place the embedded duplexer so as not to overlap theprojection region of the duplexer mounted on one of the main surfaces(top surface) of the circuit substrate 200.

Below, the above-mentioned features of the high-frequency circuit module100 according to the present embodiment will be explained. As shown inFIGS. 2 and 3, in the present embodiment, the transmission filter 122and the reception filter 124 of the second duplexer 120 are embedded inlocations that overlap the projection region of the first duplexer 110.The transmission filter 142 and the reception filter 144 of the fourthduplexer 140 are embedded in locations that overlap the projectionregion of the third duplexer 130. Further, the first duplexer 110 andthe third duplexer 130 have a distance D1 therebetween so as not tointerfere with each other. The duplexer (first duplexer 110 or thirdduplexer 130) mounted on the circuit substrate 200 may be used at thesame time as the duplexer (second duplexer 120 or fourth duplexer 140)embedded in the circuit substrate 200.

According to such a high-frequency circuit module 100, the duplexers 120and 140 are embedded in the circuit substrate 200, and therefore, themounting density is improved. Also, because the embedded duplexers 120and 140 are respectively located so as to overlap the projection regionsof the respective duplexers mounted on the circuit substrate 200, a highmounting density can be achieved and various wiring lines that areconnected to the duplexers can be shortened, which improveshigh-frequency characteristics.

Further, according to the high-frequency circuit module 100 of thepresent embodiment, a sufficient gap lies between the pass frequencybands of the duplexers 110 and 130 mounted on the circuit substrate 200and the pass frequency bands of the duplexers 120 and 140 embedded inthe circuit substrate 200, which can prevent the loop interference ofthe transmission signal with the reception circuit. That is, excellentelectrical isolation can be achieved. Because the ground conductivelayers 225 and 226 are formed between the duplexers 110 and 130 mountedon the circuit substrate 200 and the duplexers 120 and 140 embedded inthe circuit substrate 200, the electrical isolation can be furtherimproved. The duplexers 110 and 130 are mounted on the circuit substrate200 so as to have at least a prescribed distance therebetween, andtherefore, an excellent electrical isolation is ensured even when thefrequency bands of the two duplexers partially overlap, or are close toeach other.

Although not shown in FIG. 1 and the like, a matching circuit istypically mounted near each duplexer. Components of the matching circuitare mounted on the circuit substrate so that adjustments after mountingcan be made with ease. In the present embodiment, although the duplexers120 and 140 are embedded in the circuit substrate 200, components of thematching circuits that are connected to the duplexers 120 and 140 aremounted on the circuit substrate 200 in locations near the duplexers 120and 140. That is, the matching circuit of the first duplexer 110 and thematching circuit of the second duplexer 120 are mounted close to eachother. The matching circuits of the third and fourth duplexers 130 and140 are provided in the same manner. In the present embodiment, becausea sufficient gap lies between the pass frequency bands of the first andthird duplexers 110 and 130 and the pass frequency bands of the secondand fourth duplexers 120 and 140, and because the ground conductivelayers 225 and 226 are provided, it is possible to prevent interferencethrough the matching circuits. The frequency band of the first duplexer110 and the frequency band of the third duplexer 130 partially overlap,or are close to each other, and therefore, the respective matchingcircuits thereof need to be placed apart from each other so as toprevent interference therebetween, or need to be placed so as to reducecoupling therebetween. The frequency band of the second duplexer 120 andthe frequency band of the fourth duplexer 140 partially overlap, or areclose to each other, and therefore, the respective matching circuitsthereof need to be placed apart from each other so as to preventinterference therebetween, or need to be placed so as to reduce couplingtherebetween. This way, interference through the matching circuits canbe prevented.

According to the high-frequency circuit module 100 of the presentembodiment, the duplexers 110 and 130 are mounted on the circuitsubstrate 200, and the duplexers 120 and 140 are embedded in the circuitsubstrate 200. Therefore, even when these duplexers are used at the sametime, heat generated in the duplexers, especially in the transmissionfilters thereof, is not concentrated, and the heat can be releasedthrough different paths. This makes it possible to prevent thecharacteristics degradation caused by heat.

One embodiment of the present invention has been explained above, butthe present invention is not limited to this. For example, in the aboveembodiment, copper and a copper alloy were given as examples of thematerial of the core layer 210, but any material including metals,alloys, and resins can be used. The core layer 210 may or may not haveconductivity. In the above embodiment, the circuit substrate 200 wasdescribed as a substrate that has the core layer 210, which isrelatively thick, but a multi-layer circuit substrate that does not havethe core layer 210 may be used instead. In the above embodiment, therespective components that are mounted on the top surface of the circuitsubstrate 200 are exposed, but it is also possible to provide a casethat covers the entire top surface or a part of the top surface of thecircuit substrate 200, or to seal the top surface using a resin or thelike.

In the above embodiment, the duplexers 110 and 130 that were enclosed inthe packages were mounted on the circuit substrate 200, but it is alsopossible to mount the transmission filters and the reception filtersthat constitute the respective duplexers on the circuit substrate 200 asseparate components. In the above embodiment, the transmission filtersand the reception filters that respectively constitute the duplexersthat are embedded in the circuit substrate 200 were provided as separatecomponents, but the embedded duplexer may also be enclosed in a package.In the above embodiment, each penetrating hole 211 formed in the corelayer 210 was provided with one transmission filter or one receptionfilter, but it is also possible to place a plurality of filters in onepenetrating hole 211.

The frequency bands that were described in the above embodiment areexamples, and the present invention can be implemented for otherfrequency bands. Also, in the above embodiment, a duplexer was given asan example of a multiplexer (antenna sharing device), but the presentinvention can be implemented in a multiplexer that has three or morepass frequency bands such as a triplexer.

What is claimed is:
 1. A high-frequency circuit module, comprising: acircuit substrate that is provided with a transmission circuit and areception circuit for a high-frequency signal; a first high-frequencyamplifier that amplifies a signal in a first frequency band outputtedfrom a transmission circuit; a second high-frequency amplifier thatamplifies a signal in a second frequency band outputted from thetransmission circuit; a first transmission filter that filters a signaloutputted from the first high-frequency amplifier; and a secondtransmission filter that filters a signal outputted from the secondhigh-frequency amplifier, wherein the first frequency band and thesecond frequency band are separated from each other by at least aprescribed frequency range therebetween, wherein the firsthigh-frequency amplifier and the second high-frequency amplifier aremounted on the circuit substrate as one package, wherein the firsttransmission filter is mounted on the circuit substrate, wherein thesecond transmission filter is embedded in the circuit substrate, andwherein the first transmission filter and the second transmission filterare respectively acoustic wave filters.
 2. The high-frequency circuitmodule according to claim 1, wherein one of the first frequency band andthe second frequency band is at least 1 GHz with another thereof beingless than 1 GHz.
 3. The high-frequency circuit module according to claim1, wherein the circuit substrate includes a ground conductive layerformed between the first transmission filter and the second transmissionfilter.
 4. The high-frequency circuit module according to claim 2,wherein the circuit substrate includes a ground conductive layer formedbetween the first transmission filter and the second transmissionfilter.
 5. The high-frequency circuit module according to claim 1,further comprising: a first reception filter that performs filtering inthe first frequency band on a signal inputted into the receptioncircuit; and a second reception filter that performs filtering in thesecond frequency band on a signal inputted into the reception circuit,wherein the first transmission filter and the first reception filterconstitute a first duplexer circuit, and wherein the second transmissionfilter and the second reception filter constitute a second duplexercircuit.
 6. The high-frequency circuit module according to claim 2,further comprising: a first reception filter that performs filtering inthe first frequency band on a signal inputted into the receptioncircuit; and a second reception filter that performs filtering in thesecond frequency band on a signal inputted into the reception circuit,wherein the first transmission filter and the first reception filterconstitute a first duplexer circuit, and wherein the second transmissionfilter and the second reception filter constitute a second duplexercircuit.
 7. The high-frequency circuit module according to claim 3,further comprising: a first reception filter that performs filtering inthe first frequency band on a signal inputted into the receptioncircuit; and a second reception filter that performs filtering in thesecond frequency band on a signal inputted into the reception circuit,wherein the first transmission filter and the first reception filterconstitute a first duplexer circuit, and wherein the second transmissionfilter and the second reception filter constitute a second duplexercircuit.
 8. The high-frequency circuit module according to claim 4,further comprising: a first reception filter that performs filtering inthe first frequency band on a signal inputted into the receptioncircuit; and a second reception filter that performs filtering in thesecond frequency band on a signal inputted into the reception circuit,wherein the first transmission filter and the first reception filterconstitute a first duplexer circuit, and wherein the second transmissionfilter and the second reception filter constitute a second duplexercircuit.
 9. The high-frequency circuit module according to claim 1,wherein the transmission circuit and the reception circuit transmit andreceive high-frequency signals according to frequency division duplex.10. The high-frequency circuit module according to claim 2, wherein thetransmission circuit and the reception circuit transmit and receivehigh-frequency signals according to frequency division duplex.
 11. Thehigh-frequency circuit module according to claim 3, wherein thetransmission circuit and the reception circuit transmit and receivehigh-frequency signals according to frequency division duplex.
 12. Thehigh-frequency circuit module according to claim 4, wherein thetransmission circuit and the reception circuit transmit and receivehigh-frequency signals according to frequency division duplex.
 13. Thehigh-frequency circuit module according to claim 5, wherein thetransmission circuit and the reception circuit transmit and receivehigh-frequency signals according to frequency division duplex.
 14. Thehigh-frequency circuit module according to claim 6, wherein thetransmission circuit and the reception circuit transmit and receivehigh-frequency signals according to frequency division duplex.
 15. Thehigh-frequency circuit module according to claim 8, wherein thetransmission circuit and the reception circuit transmit and receivehigh-frequency signals according to frequency division duplex.
 16. Thehigh-frequency circuit module according to claim 1, wherein the circuitsubstrate is a multilayer circuit substrate in which insulating layersand conductive layers are stacked, the circuit substrate having a corelayer that is a conductive layer greater in thickness than anotherconductive layer and that functions as a ground, and wherein the secondtransmission filter is disposed in a penetrating hole formed in the corelayer.
 17. The high-frequency circuit module according to claim 2,wherein the circuit substrate is a multilayer circuit substrate in whichinsulating layers and conductive layers are stacked, the circuitsubstrate having a core layer that is a conductive layer greater inthickness than another conductive layer and that functions as a ground,and wherein the second transmission filter is disposed in a penetratinghole formed in the core layer.
 18. The high-frequency circuit moduleaccording to claim 3, wherein the circuit substrate is a multilayercircuit substrate in which insulating layers and conductive layers arestacked, the circuit substrate having a core layer that is a conductivelayer greater in thickness than another conductive layer and thatfunctions as a ground, and wherein the second transmission filter isdisposed in a penetrating hole formed in the core layer.
 19. Thehigh-frequency circuit module according to claim 4, wherein the circuitsubstrate is a multilayer circuit substrate in which insulating layersand conductive layers are stacked, the circuit substrate having a corelayer that is a conductive layer greater in thickness than anotherconductive layer and that functions as a ground, and wherein the secondtransmission filter is disposed in a penetrating hole formed in the corelayer.
 20. The high-frequency circuit module according to claim 5,wherein the circuit substrate is a multilayer circuit substrate in whichinsulating layers and conductive layers are stacked, the circuitsubstrate having a core layer that is a conductive layer greater inthickness than another conductive layer and that functions as a ground,and wherein the second transmission filter is disposed in a penetratinghole formed in the core layer.
 21. The high-frequency circuit moduleaccording to claim 6, wherein the circuit substrate is a multilayercircuit substrate in which insulating layers and conductive layers arestacked, the circuit substrate having a core layer that is a conductivelayer greater in thickness than another conductive layer and thatfunctions as a ground, and wherein the second transmission filter isdisposed in a penetrating hole formed in the core layer.
 22. Thehigh-frequency circuit module according to claim 7, wherein the circuitsubstrate is a multilayer circuit substrate in which insulating layersand conductive layers are stacked, the circuit substrate having a corelayer that is a conductive layer greater in thickness than anotherconductive layer and that functions as a ground, and wherein the secondtransmission filter is disposed in a penetrating hole formed in the corelayer.
 23. The high-frequency circuit module according to claim 8,wherein the circuit substrate is a multilayer circuit substrate in whichinsulating layers and conductive layers are stacked, the circuitsubstrate having a core layer that is a conductive layer greater inthickness than another conductive layer and that functions as a ground,and wherein the second transmission filter is disposed in a penetratinghole formed in the core layer.
 24. The high-frequency circuit moduleaccording to claim 9, wherein the circuit substrate is a multilayercircuit substrate in which insulating layers and conductive layers arestacked, the circuit substrate having a core layer that is a conductivelayer greater in thickness than another conductive layer and thatfunctions as a ground, and wherein the second transmission filter isdisposed in a penetrating hole formed in the core layer.
 25. Thehigh-frequency circuit module according to claim 10, wherein the circuitsubstrate is a multilayer circuit substrate in which insulating layersand conductive layers are stacked, the circuit substrate having a corelayer that is a conductive layer greater in thickness than anotherconductive layer and that functions as a ground, and wherein the secondtransmission filter is disposed in a penetrating hole formed in the corelayer.
 26. The high-frequency circuit module according to claim 11,wherein the circuit substrate is a multilayer circuit substrate in whichinsulating layers and conductive layers are stacked, the circuitsubstrate having a core layer that is a conductive layer greater inthickness than another conductive layer and that functions as a ground,and wherein the second transmission filter is disposed in a penetratinghole formed in the core layer.
 27. The high-frequency circuit moduleaccording to claim 12, wherein the circuit substrate is a multilayercircuit substrate in which insulating layers and conductive layers arestacked, the circuit substrate having a core layer that is a conductivelayer greater in thickness than another conductive layer and thatfunctions as a ground, and wherein the second transmission filter isdisposed in a penetrating hole formed in the core layer.
 28. Thehigh-frequency circuit module according to claim 13, wherein the circuitsubstrate is a multilayer circuit substrate in which insulating layersand conductive layers are stacked, the circuit substrate having a corelayer that is a conductive layer greater in thickness than anotherconductive layer and that functions as a ground, and wherein the secondtransmission filter is disposed in a penetrating hole formed in the corelayer.
 29. The high-frequency circuit module according to claim 14,wherein the circuit substrate is a multilayer circuit substrate in whichinsulating layers and conductive layers are stacked, the circuitsubstrate having a core layer that is a conductive layer greater inthickness than another conductive layer and that functions as a ground,and wherein the second transmission filter is disposed in a penetratinghole formed in the core layer.
 30. The high-frequency circuit moduleaccording to claim 15, wherein the circuit substrate is a multilayercircuit substrate in which insulating layers and conductive layers arestacked, the circuit substrate having a core layer that is a conductivelayer greater in thickness than another conductive layer and thatfunctions as a ground, and wherein the second transmission filter isdisposed in a penetrating hole formed in the core layer.